Controlling crystallinity and thickness of monocrystalline layer

Details Controlling crystallinity and thickness of monocrystalline layer Controlling crystallinity and thickness of monocrystalline layer

1981-06-04

1984-02-28

Bernstein, Hiram H.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156605, C30B 2302

Patent

active

044340257

ABSTRACT:
Monocrystalline layers of semiconductor materials are formed by epitaxial growth from thermal vapor deposition. Crystallinity and thickness of the monocrystalline layers are monitored and controlled during growth by ellipsometry. Low defect density thin film monocrystalline semiconductor devices with appropriate doping levels are formed. These are useful in photovoltaic solar cells of high efficiencies which can approach the theoretical limits.

REFERENCES:
patent: 3718502 (1973-02-01), Gibbons
patent: 3892490 (1975-07-01), Uetsuki et al.
patent: 4203799 (1980-05-01), Sugawara

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