Controlled thermal-oxidation thinning of polycrystalline silicon

Details Controlled thermal-oxidation thinning of polycrystalline silicon Controlled thermal-oxidation thinning of polycrystalline silicon

1983-09-19

1984-06-12

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156653, 156657, 1566591, 156662, 427 93, H01L 21306, B44C 122, C03C 1500, C03C 2506

Patent

active

044540027

ABSTRACT:
A polycrystalline silicon fuse is formed to have a thickness below 1000 Angstroms by depositing a polycrystalline silicon layer to a thickness greater than 1200 Angstroms, oxidizing the polycrystalline silicon in a partially rich oxygen atmosphere to under 1000 Angstroms, removing the oxide layer over at least a sample fuse and measuring the thickness of the polycrystalline silicon.

REFERENCES:
patent: 3699395 (1972-10-01), Boleky
patent: 3699403 (1972-10-01), Boleky
patent: 3792319 (1974-02-01), Tsang
patent: 4053349 (1977-10-01), Simko
patent: 4176003 (1979-11-01), Brower et al.
patent: 4219379 (1980-08-01), Athanas
patent: 4285761 (1981-08-01), Fatula et al.
patent: 4377605 (1983-03-01), Yamamoto

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