Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Post imaging radiant energy exposure
Patent
1997-09-05
2000-09-12
Duda, Kathleen
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Post imaging radiant energy exposure
430322, 430330, G03F 740
Patent
active
061176222
ABSTRACT:
A process for controlled shrinkage of photolithographic features formed in photoresist. A shrinkage profile is determined for the photoresist and sizes of the photolithographic features. The photoresist is then exposed to ultraviolet radiation and elevated temperature until the photolithographic features shrink a desired amount.
REFERENCES:
patent: 4842992 (1989-06-01), Arai
patent: 4921778 (1990-05-01), Thackeray et al.
patent: 5096802 (1992-03-01), Hu
patent: 5108875 (1992-04-01), Thackeray et al.
patent: 5272042 (1993-12-01), Allen et al.
patent: 5344742 (1994-09-01), Sinta et al.
patent: 5350660 (1994-09-01), Urano et al.
patent: 5366851 (1994-11-01), Novembre
patent: 5385809 (1995-01-01), Bohrer et al.
patent: 5516608 (1996-05-01), Hobbs et al.
patent: 5556734 (1996-09-01), Yamachika et al.
patent: 5558978 (1996-09-01), Schadeli et al.
patent: 5585507 (1996-12-01), Nakano et al.
Mixon, D.A., et al., "Effect of Partial Deprotection on Lithographic Properties of t-Butoxycarbonyloxystyrene-Containing Polymers," SPIE, vol. 2195, pp. 297-306.
Hiroshi Ito, "Deep-UV Resists: Evolution and Status", Solid State Technology, Jul. 1996, pp. 164-173.
Nalamasu, Omkaram, et al., "Recent Progress in Resist Materials for 193 NM Lithography", Future Fab International, pp. 159-163.
Conley, Will, et al., "Performance of an Advanced DUV Photoresist for 256Mb DRAM Fabrication", Future Fab International, pp. 123-130.
Eisele Jeffrey Allan
Mohondro Robert Douglas
Duda Kathleen
Fusion Systems Corporation
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