Controlled process and resulting device

Details Controlled process and resulting device Controlled process and resulting device

2008-07-10

2010-12-07

Lee, Hsien-ming (Department: 2823)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Subsequent separation into plural bodies

C438S526000, C438S528000, C438S974000, C257SE21568, C257SE21570

Reexamination Certificate

active

07846818

ABSTRACT:
A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

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