Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate
Reexamination Certificate
2007-07-03
2007-07-03
Sarkar, Asok Kumar (Department: 2891)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
C977S762000
Reexamination Certificate
active
11008989
ABSTRACT:
This invention presents a novel method to form uniform or heterogeneous, straight or curved and size-controllable nanostructures including, for example, nanotubes, nanowires, nanoribbons, and nanotapes, including SiNW, using a nanochannel template. In the case of semiconductor nanowires, doping can be included during growth. Electrode contacts are present as needed and may be built in to the template structure. Thus completed devices such as diodes, transistors, solar cells, sensors, and transducers are fabricated, contacted, and arrayed as nanowire or nanotape fabrication is completed. Optionally, the template is not removed and may become part of the structure. Nanodevices such as nanotweezers, nanocantilevers, and nanobridges are formed utilizing the processes of the invention.
REFERENCES:
patent: 2004/0005258 (2004-01-01), Fonash et al.
patent: 2004/0079278 (2004-04-01), Kamins et al.
patent: 2004/0127012 (2004-07-01), Jin
patent: 2004/0213307 (2004-10-01), Lieber et al.
patent: 1264919 (2002-12-01), None
Bjorn Marsen and Klaus Sattler, Fullerene-Structured Nanowires of Silicon, Physical Review B, vol. 60, No. 16, Oct. 15, 1999, 593-600, The American Physical Society.
R. S. Wagner and W. C. Ellis, Vapor-Liquid-Solid Mechanism Of Single Crystal Growth, Applied Physics Letters, vol. 4, No. 5, Mar. 1, 1964, 89-90.
Chih-Yi Peng, et al., Formation of Nanstructured Polymer Filaments in Nanochannels, JACS Communications, American Chemical Society, received Feb. 6, 2003.
E.I. Givargizov, Fundamental Aspects of VLS Growth, Journal of Crystal Growth, 31, 1975 20-30, North-Holland Publishing Company.
Sau-Wan Cheng and Ho-Fai Cheung, Role of Electric Field on Formation of Silicon Nanowires, Journal of Applied Physics, vol. 94, No. 2, Jul. 15, 2003, 1190-1194 American Institute of Physics.
Erik J. Bjerneld, et al. Laser-Induced Growth and Deposition of Noble-Metal Nanoparticles for Surface-Enhanced Raman Scattering, Nano Letters, 2003 vol. 3., No. 5, 593-596, American Chemical Society.
“Edited by—H. Baltes, W. Göpel, J. Hesse”, Sensors Update, vol. 4, Wiley-Vch Verlag GmbH, D-69469 Weinheim, Federal Republic of Germany, 1998, 1-220.
“H. G. Craighead”, Issues In Nanotechnology Review—Nanoelectromechanical Systems, Science Mag. Nov. 24, 2000, vol. 290, 532-1535.
Michael Roukes, Nanoelectromechanical System Face The Future, Physicsweb, Feature: Feb. 1-6, 2001, http://physicsweb.org/articles/world/14/2/8/2.
J. Fritz et al., Translating Biomelecular Recognition into Nanomechanics, Science Magazine, Apr. 14, 2000, vol. 288, 316-318.
Butterfoss Paul
Cuiffi Joseph D.
Fonash Stephen J.
Hayes Daniel
Kalkan Ali Kaan
Nixon & Peabody LLP
Sarkar Asok Kumar
The Penn State Research Foundation
LandOfFree
Controlled nanowire growth in permanent, integrated... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Controlled nanowire growth in permanent, integrated..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Controlled nanowire growth in permanent, integrated... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3811162