Controlled ion implant damage profile for etching

Details Controlled ion implant damage profile for etching Controlled ion implant damage profile for etching

1988-08-18

1990-12-18

Simmons, David

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156667, C23C 2200, B05D 300

Patent

active

049784188

ABSTRACT:
A process for etching a material such as LiNbO.sub.3 by implanting ions having a plurality of different kinetic energies in an area to be etched, and then contacting the ion implanted area with an etchant. The various energies of the ions are selected to produce implant damage substantially uniformly throughout the entire depth of the zone to be etched, thus tailoring the vertical profile of the damaged zone.

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