Controlled heat sink for crystal ribbon growth

Details Controlled heat sink for crystal ribbon growth Controlled heat sink for crystal ribbon growth

1981-09-14

1983-11-29

Bernstein, Hiram H.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156617H, 156DIG97, 156DIG73, C30B 1506

Patent

active

044179448

ABSTRACT:
A method and associated apparatus are disclosed for use in forming crystalline ribbons by pulling a ribbon in a generally horizontal direction from a pool of molten crystal-forming materials, such as silicon or the like. A heat sink is located above the surface of the molten material proximate to the crystal forming area to remove heat therefrom. The heat sink is cooled continuously and heat is transferred from the molten material to the heat sink by a gaseous thermally conductive medium maintained between the heat sink and the surface of the melt.

REFERENCES:
patent: 3218143 (1965-11-01), Lajarte
patent: 3759671 (1973-09-01), Bleil
patent: 4000030 (1976-12-01), Ciszek
patent: 4226834 (1980-10-01), Shudo et al.
Bleil, A. New Method for Growing Crystal Ribbons, Jl. of Crystal Growth 5, 99-104, Oct. 68.

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