Controlled etching process for forming fine-geometry circuit lin

Details Controlled etching process for forming fine-geometry circuit lin Controlled etching process for forming fine-geometry circuit lin

1992-03-25

1993-06-22

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156656, 1566591, 156901, 156345, B44C 122, C23F 100

Patent

active

052214214

ABSTRACT:
A specialized etching method for producing fine-geometry gold circuit structures. Production thereof is accomplished by maintaining a constant gold etching rate. Metal etching normally slows as the amount of dissolved gold (a reaction product of the etching process) increases. To remove the dissolved gold, one method involves cooling the etchant to precipitate a gold complex therefrom. The remaining, recovered etchant is then heated and made available for continued etching. Another method involves a cathode/anode assembly which is immersed in the etchant. Activation of the assembly recovers metallic gold and regenerates the etchant. These methods, when used continuously or periodically in a dip or spray etching system, maintain a constant etching rate. As a result, fine-geometry circuit structures may be accurately produced while minimizing material costs (e.g. etchant use) and minimizing the production of undesirable waste products and disposal expenses associated therewith.

REFERENCES:
patent: 3607482 (1971-09-01), Selm
patent: 4319923 (1982-03-01), Falanga et al.
Elliott, D. J., Integrated Circuit Fabrication Technology, McGraw-Hill Book Company (New York), pp. 1-41, (1982).

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