Controlled electroless plating

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S622000, C438S508000, C427S443100

Reexamination Certificate

active

10994720

ABSTRACT:
An electroless metal deposition process to make a semiconductor device uses a plating bath solution having a reducing agent. A sample of the bath solution is taken and the pH of the sample is increased. The hydrogen evolved from the sample is measured. The hydrogen evolved is used to determine the concentration of the reducing agent present in the sample. Based on the determined reducing agent concentration, the plating bath solution is modified.

REFERENCES:
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patent: 6709561 (2004-03-01), Pavlov et al.
patent: 6797312 (2004-09-01), Kong et al.
patent: 6924232 (2005-08-01), Mathew et al.
patent: 2004/0137161 (2004-07-01), Segawa et al.
patent: 2004/0157441 (2004-08-01), Inoue et al.
patent: 2006/0202342 (2006-09-01), Andreyushchenko et al.
“Quantitative Analysis of Active Metals and Metal Hydrides via Gas Buret”; Aldrich Technichal Bulletin AL-123; Apr. 1996; 3 pgs.
“Electroless Nickel Plating Bath”; Dionex Web Site; 2003; http://www.dionex.com/en/columns—accessories/ion—exchange/flash/fullflash3216.
U.S. Appl. No. 10/650,002, filed Aug. 27, 2003.

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