Controlled dry etch of a film

Details Controlled dry etch of a film Controlled dry etch of a film

2007-10-30

2007-10-30

Ngô, Ngân V. (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S694000, C438S942000, C438S946000, C438S950000

Reexamination Certificate

active

11044393

ABSTRACT:
The controlled etch into a substrate or thick homogeneous film is accomplished by introducing a sacrificial film to gauge the depth to which the substrate/thick film has been etched. Optical endpointing the etch of the sacrificial film on the etch stop layer allows another element of process control over the depth of the primary trench or via.

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patent: 0316550 (1989-05-01), None

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