Controlled doping of semiconductor nanowires

Details Controlled doping of semiconductor nanowires Controlled doping of semiconductor nanowires

2011-03-29

2011-03-29

Vu, David (Department: 2818)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

C438S510000, C438S542000, C438S558000, C977S749000, C977S762000

Reexamination Certificate

active

07915146

ABSTRACT:
A catalyst particle on a substrate is exposed to reactants containing a semiconductor material in a reactor. An intrinsic semiconductor nanowire having constant lateral dimensions is grown at a low enough temperature so that pyrolysis of the reactant is suppressed on the sidewalls of the intrinsic semiconductor nanowire. Once the intrinsic semiconductor nanowire grows to a desired length, the temperature of the reactor is raised to enable pyrolysis on the sidewalls of the semiconductor nanowire, and thereafter dopants are supplied into the reactor with the reactant. A composite semiconductor nanowire having an intrinsic inner semiconductor nanowire and a doped semiconductor shell is formed. The catalyst particle is removed, followed by an anneal that distributes the dopants uniformly within the volume of the composite semiconductor nanowire, forming a semiconductor nanowire having constant lateral dimensions and a substantially uniform doping.

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