Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1999-07-12
2000-09-05
Monin, Jr., Donald L.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257384, 257751, 257916, H01L 21336, H01L 23283
Patent
active
061147362
ABSTRACT:
A MOSFET device is formed on a P- doped semiconductor substrate with an N- well formed therein, with a pair of isolation regions formed in the N- well with a gate oxide layer formed above the N- well. An FET device is formed with source and drain regions within the N-well, and a gate electrode formed above the gate oxide layer aligned with the source and drain regions. The gate electrode comprises a stack of layers. A polysilicon layer is formed on the gate oxide layer. A tungsten nitride dopant barrier layer is formed upon the polysilicon layer having a thickness of from about 5 nm to about 20 nm, and a tungsten silicide layer is formed upon the tungsten nitride layer.
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Balasubramanyam Karanam
Brodsky Stephen Bruce
Conti Richard Anthony
El-Kareh Badih
International Business Machines - Corporation
Jones II Graham S.
Monin, Jr. Donald L.
Neff Daryl K.
Peterson Jr. Charles W.
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