Semiconductor device manufacturing: process – Semiconductor substrate dicing
Patent
1998-02-19
2000-12-12
Mulpuri, Savitri
Semiconductor device manufacturing: process
Semiconductor substrate dicing
438459, 438428, H01L 2100, H01L 21265
Patent
active
061598259
ABSTRACT:
A technique for forming films of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define donor substrate material (12) above the selected depth. Energy is provided to a selected region of the substrate to cleave a thin film of material from the donor substrate. Particles are introduced again into the donor substrate underneath a fresh surface of the donor substrate. A second thin film of material is then cleaved from the donor substrate.
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Cheung Nathan W.
Henley Francois J.
Mulpuri Savitri
Silicon Genesis Corporation
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