Controlled cleaning process

Details Controlled cleaning process Controlled cleaning process

1998-02-19

2000-01-11

Bowers, Charles

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Subsequent separation into plural bodies

438455, 438459, 438526, 438974, H01L 21265

Patent

active

060135638

ABSTRACT:
A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

REFERENCES:
patent: 3117022 (1964-01-01), Bronson et al.
patent: 3225820 (1965-12-01), Riordan
patent: 3551213 (1970-12-01), Boyle
patent: 3786359 (1974-01-01), King
patent: 3806380 (1974-04-01), Kitada et al.
patent: 3832219 (1974-08-01), Nelson et al.
patent: 3900636 (1975-08-01), Curry et al.
patent: 3907107 (1976-05-01), Altoz et al.
patent: 3915757 (1975-10-01), Engel
patent: 3993909 (1976-11-01), Drews et al.
patent: 4006340 (1977-02-01), Gorinas
patent: 4039416 (1977-08-01), White
patent: 4074139 (1978-02-01), Pankove
patent: 4107350 (1978-08-01), Berg et al.
patent: 4108751 (1978-08-01), King
patent: 4121334 (1978-10-01), Wallis
patent: 4170662 (1979-10-01), Weiss et al.
patent: 4252837 (1981-02-01), Auton
patent: 4274004 (1981-06-01), Kanai
patent: 4346123 (1982-08-01), Kaufmann
patent: 4361600 (1982-11-01), Brown
patent: 4368083 (1983-01-01), Bruel et al.
patent: 4412868 (1983-11-01), Brown et al.
patent: 4452644 (1984-06-01), Bruel et al.
patent: 4468309 (1984-08-01), White
patent: 4471003 (1984-09-01), Cann
patent: 4486247 (1984-12-01), Ecer et al.
patent: 4490190 (1984-12-01), Speri
patent: 4500563 (1985-02-01), Ellenberger et al.
patent: 4508056 (1985-04-01), Bruel et al.
patent: 4536657 (1985-08-01), Bruel
patent: 4566403 (1986-01-01), Fournier
patent: 4567505 (1986-01-01), Pease
patent: 4568563 (1986-02-01), Jackson et al.
patent: 4585945 (1986-04-01), Bruel et al.
patent: 4684535 (1987-08-01), Heinecke et al.
patent: 4704302 (1987-11-01), Bruel et al.
patent: 4717683 (1988-01-01), Parrillo et al.
patent: 4764394 (1988-08-01), Conrad
patent: 4837172 (1989-06-01), Mizuno et al.
patent: 4846928 (1989-07-01), Dolins et al.
patent: 4847792 (1989-07-01), Barna et al.
patent: 4853250 (1989-08-01), Boulos et al.
patent: 4887005 (1989-12-01), Rough et al.
patent: 4894709 (1990-01-01), Phillips et al.
patent: 4931405 (1990-06-01), Kamijo et al.
patent: 4948458 (1990-08-01), Ogle
patent: 4952273 (1990-08-01), Popov
patent: 4960073 (1990-10-01), Suzuki et al.
patent: 4982090 (1991-01-01), Wittmaack
patent: 4996077 (1991-02-01), Moslehi et al.
patent: 5015353 (1991-05-01), Hubler et al.
patent: 5034343 (1991-07-01), Rouse et al.
patent: 5070040 (1991-12-01), Pankove
patent: 5082793 (1992-01-01), Li
patent: 5110748 (1992-05-01), Sarma
patent: 5133826 (1992-07-01), Dandl
patent: 5196355 (1993-03-01), Wittkower
patent: 5198371 (1993-03-01), Li
patent: 5202095 (1993-04-01), Houchin et al.
patent: 5203960 (1993-04-01), Dandl
patent: 5234529 (1993-08-01), Johnson
patent: 5242861 (1993-09-01), Inaba
patent: 5250328 (1993-10-01), Otto
patent: 5252178 (1993-10-01), Moslehi
patent: 5269880 (1993-12-01), Jolly et al.
patent: 5273610 (1993-12-01), Thomas, III et al.
patent: 5304509 (1994-04-01), Sopori
patent: 5342472 (1994-08-01), Imahashi et al.
patent: 5368710 (1994-11-01), Chen et al.
patent: 5370765 (1994-12-01), Dandl
patent: 5374564 (1994-12-01), Bruel
patent: 5376560 (1994-12-01), Aronowitz et al.
patent: 5404079 (1995-04-01), Ohkuni et al.
patent: 5405480 (1995-04-01), Benzing et al.
patent: 5411592 (1995-05-01), Ovshinsky et al.
patent: 5435880 (1995-07-01), Minato et al.
patent: 5487785 (1996-01-01), Horiike et al.
patent: 5494835 (1996-02-01), Bruel
patent: 5504328 (1996-04-01), Bonser
patent: 5559043 (1996-09-01), Bruel
patent: 5653811 (1997-08-01), Chan
patent: 5854123 (1998-12-01), Sato et al.
B.H.Lee et al., "A Novel Pattern Transfer Process for Bonded SOI Giga-bit DRAMSs," 1996 IEEE Int'l. SOI Conference Proceedings, IEEE Electron Devices Society, pp. 1996.
Chu, Paul K. et al., "Recent Applications of Plasma Immersion Ion Implantation," Semiconductor International, pp. 165-172, 1996.
Alles, Michael et al., "Thin Film Silicon on Insulator: An Enabling Technology," Semiconductor International, pp. 67-72, 1997.
Chu, Paul K., "Synthesis of SOI Materials Using Plasma Immersion Ion Implantation," Mat. Res. Soc. Symp. Proc. vol. 438 .COPYRGT.1997 Materials Research Society, pp. 333-343, 1997.
Picraux, S. Thomas et al., "Ion Implantation of Surfaces," Scientific American, vol. 252, No. 3., pp. 102-113, 1985.
U.S. Dept. of Energy, "The Fusion Connection: . . . ", Plasma Coating, pp. 6-7, 1985.
Cassidy, Victor M., "Ion Implantation Process Toughens Metalworking Tools," Modern Metals, pp. 65-67, 1984.
Sioshansi, Piran, "Ion Beam Modification of Materials for Industry," Thin Solid Film, vol. 118, pp. 61-71, 1984.
Hulett, D.M. et al., "Ion Nitriding and Ion Implantation: A Comparison," Metal Progress, pp. 18-21, 1985.
Reinier, M. et al., "A New Low-Engergy Ion Implanter for Bombardment of Cylindrical Surfaces," Vacuum, vol. 35, No. 12, pp. 577-578, 1985.
Basta, Nicholas, "Ion-Beam Implantation," High Technology, 1985.
Patent Abstracts of Japan, vol. 7, No. 107 (E-174), May 11, 1993, JP-58-030145 A, Feb. 22, 1983.
Matsuda et al., "Large Diameter Ion Beam Implantation System," Nuclear Intruments and Methods, vol. B21, pp. 314-316, 1987.
Stanley Wolf Ph.D., Silicon Processing for the VLSI Era (vol. 2), pp. 66-79.
Cheung, N.W., "Plasma Immersion Ion Implantation for Semiconductor Processing," Material Chemistry and Physics, vol. 46/2-3, pp. 132-139 (1996).
X. Lu et al., "SOI Material Technology Using Plasma Immersion Ion Implantation," Proceedings 1996 IEEE International SOI Conference (Oct. 1996).
Veldkamp, W.B. et al.,"Binary Optics," Scientific American, pp. 50-55, May 1992.
I.B.M. Technical Disclosure Bulletinm, vol. 29, No. 3, p. 1416, Aug. 1986.
Li, J., "Novel Semiconductor Substrate Formed by Hydrogen Ion Implantation into Silicon," Appl. Phys. Lett., vol. 55, No. 21, pp. 2223-2224, Nov. 20, 1989.
Burggraff, Peter, "Advanced Plasma Source: What's Working?" Semiconductor International, pp. 56-59, May 1994.
Chu, P.K. et al., Plasma Immersion Ion Implantation--A Fledgling Technique for Semiconductor Processing, Materials Science and Engineering Reports: A Review Journal, pp. 207-280, vol. R17, Nos. 6-7, Nov. 30, 1996.
Moreau, Wayne M., "Semiconductor Lithography, Principles, Practices, and Materials," Plenum Press, 1988.
Wolf, S., Silicon Processing for the VLSI Era (vol. 2), Lattice Press, 1990.
Garter, G. et al. "The Collection of Ions Implanted in Semiconductors Radiation Effects." Sep. 1972, vol. 16, No. 1-2, pp. 107-114. Abstract Only.

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