Controllable semiconductor switching element that blocks in...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S329000

Reexamination Certificate

active

06864535

ABSTRACT:
The controllable semiconductor switching element blocks in both directions. The semiconductor switching element is formed with a first conduction region and a second conduction region of a first type of conductivity, a blocking region of a second type of conductivity which is disposed between the first and second conducting regions, and a control electrode which is arranged opposite the blocking region and insulated from it. A recombination region is configured in the blocking region and is comprised of a material that promotes a recombination of charge carriers of the first and second type of conductivity.

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Jens Peer Stengl et al.: “Leistungs-MOS-FET-Praxis” [power MOSFET in practice],Pflaum Verlag, Munich, 1992, pp. 29-35.

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