Controllable semiconductor modulator having interleaved contacts

Details Controllable semiconductor modulator having interleaved contacts Controllable semiconductor modulator having interleaved contacts

1990-05-18

1992-03-03

James, Andrew J.

357 16, 357 30, 357 4, H01L 29161, H01L 2948, H01L 2956, H01L 2964

Patent

active

050936956

ABSTRACT:
In a semiconductor optical modulator, two semiconductor materials having different refractive indices are grown in an alternating sequence of layers to form a semiconductor mirror wherein each layer has approximately a quarter wave thickness for a predetermined wavelength. Delta doping is performed at each heterointerface. The delta doping conductivity type alternates from one heterointerface to the next. Lateral surface contacts are selectively made to the n-type heterointerfaces on one edge of the mirror and to the p-type heterointerfaces on the other edge of the mirror. An interleaved ohmic contact structure results within the modulator. By applying a nominally low voltage to the lateral surface contacts, it is possible to effect refractive index changes in the layers so that the mirror performs reflection or transmission of an impinging light beam.

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Appl. Phys. Lett. 51 (23), Dec. 7, 1987, "Modulation of Light by an Electrically Tunable Multilayer Interference Filter", G. W. Yoffe, et al., pp. 1876-1878.
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Appl. Phys. Lett., 53(8), Aug. 22, 1988, "Electrically Tunable Fabry-Perot Mirror Using Multiple Quantum Well Index Modulation", Simes et al., pp. 637-639.

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