Controllable semiconductor component with multi-section...

Details Controllable semiconductor component with multi-section... Controllable semiconductor component with multi-section...

2005-07-05

2005-07-05

Loke, Steven (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S139000, C257S342000

Reexamination Certificate

active

06914296

ABSTRACT:
The controllable semiconductor component (1) has a body (10) consisting of doped silicon. Two separate electrodes (3, 4) are connected to the silicon, between which an electric operating voltage (U) of the component (1) is applied. A control electrode (2), to which an electric control voltage (Us) for controlling the component (1) is applied, is insulated from the silicon of the body (10) by electric insulation material (100). According to the invention, the control electrode (2) has two control electrode sections (21, 22), separated from one another by a gap (23). Said semiconductor component can be used for IGBTs and MOS transistors.

REFERENCES:
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patent: 5414467 (1995-05-01), Komatsu
patent: 5852559 (1998-12-01), Li
patent: 6005267 (1999-12-01), Griffin et al.
patent: 6069372 (2000-05-01), Uenishi
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patent: 0 330 142 (1989-02-01), None
International Search Report, PCT/EP01/10752, Nov. 2, 2002.

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