Controllable ovonic phase-change semiconductor memory device

Details Controllable ovonic phase-change semiconductor memory device Controllable ovonic phase-change semiconductor memory device

2007-08-07

2007-08-07

Nadav, Ori (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S004000, C257S050000, C257S529000, C257S530000

Reexamination Certificate

active

10644685

ABSTRACT:
An ovonic phase-change semiconductor memory device having a reduced area of contact between electrodes of chalcogenide memories, and methods of forming the same are disclosed. Such memory devices are formed by forming a tip protruding from a lower surface of a lower electrode element. An insulative material is applied over the lower electrode such that an upper surface of the tip is exposed. A chalcogenide material and an upper electrode are either formed atop the tip, or the tip is etched into the insulative material and the chalcogenide material and upper electrode are deposited within the recess. This allows the memory cells to be made smaller and allows the overall power requirements for the memory cell to be minimized.

REFERENCES:
patent: 4442507 (1984-04-01), Roesner
patent: 4576670 (1986-03-01), Schade
patent: 4776678 (1988-10-01), Barthelemy et al.
patent: 4800420 (1989-01-01), Chen et al.
patent: 4845533 (1989-07-01), Pryor et al.
patent: 4915779 (1990-04-01), Srodes et al.
patent: 5057451 (1991-10-01), McCollum
patent: 5168334 (1992-12-01), Mitchell et al.
patent: 5210598 (1993-05-01), Nakazaki et al.
patent: 5219782 (1993-06-01), Liu et al.
patent: 5296716 (1994-03-01), Ovshinsky et al.
patent: 5336628 (1994-08-01), Hartmann
patent: 5380674 (1995-01-01), Kimura et al.
patent: 5405800 (1995-04-01), Ogawa et al.
patent: 5468670 (1995-11-01), Ryou
patent: 5504369 (1996-04-01), Dasse et al.
patent: 5530378 (1996-06-01), Kucharewski, Jr. et al.
patent: 5557136 (1996-09-01), Gordon et al.
patent: 5587623 (1996-12-01), Jones
patent: 5789277 (1998-08-01), Zahorik et al.
patent: 5789758 (1998-08-01), Reinberg
patent: 5851882 (1998-12-01), Harshfield
patent: 5879955 (1999-03-01), Gonzalez et al.
patent: 6060723 (2000-05-01), Nakazato et al.
patent: 6111264 (2000-08-01), Wolstenholme et al.
patent: 6147395 (2000-11-01), Gilgen
patent: 6287887 (2001-09-01), Gilgen
patent: 6316784 (2001-11-01), Zahorik et al.
patent: 6337266 (2002-01-01), Zahorik
patent: 6462353 (2002-10-01), Gilgen
patent: 07-058204 (1993-08-01), None
patent: WO 96/41380 (1996-12-01), None

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