Controllable ovonic phase-change semiconductor memory device...

Details Controllable ovonic phase-change semiconductor memory device... Controllable ovonic phase-change semiconductor memory device...

2011-05-03

2011-05-03

Nadav, Ori (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S004000, C257S050000, C257S529000, C257S530000

Reexamination Certificate

active

07935950

ABSTRACT:
An ovonic phase-change semiconductor memory device having a reduced area of contact between electrodes of chalcogenide memories, and methods of programming the same are disclosed. Such memory devices include a lower electrode including non-parallel sidewalls. An insulative material overlies the lower electrode such that an upper surface of the lower electrode is exposed. In one embodiment, the insulative material and lower electrode may have a co-planar upper surface. In another embodiment, an upper surface of the lower electrode is within a recess in the insulative material. A chalcogenide material and an upper electrode are formed over the upper surface of the lower electrode. This allows the memory cells to be made smaller and allows the overall power requirements for the memory cell to be minimized.

REFERENCES:
patent: 4199731 (1980-04-01), Taylor et al.
patent: 4223277 (1980-09-01), Taylor et al.
patent: 4442507 (1984-04-01), Roesner
patent: 4576670 (1986-03-01), Schade
patent: 4646266 (1987-02-01), Ovshinsky et al.
patent: 4776678 (1988-10-01), Barthelemy et al.
patent: 4800420 (1989-01-01), Chen et al.
patent: 4845533 (1989-07-01), Pryor et al.
patent: 4915779 (1990-04-01), Srodes et al.
patent: 5057451 (1991-10-01), McCollum
patent: 5168334 (1992-12-01), Mitchell et al.
patent: 5210598 (1993-05-01), Nakazaki et al.
patent: 5219782 (1993-06-01), Liu et al.
patent: 5296716 (1994-03-01), Ovshinsky et al.
patent: 5336628 (1994-08-01), Hartmann
patent: 5380674 (1995-01-01), Kimura et al.
patent: 5405800 (1995-04-01), Ogawa et al.
patent: 5468670 (1995-11-01), Ryou
patent: 5504369 (1996-04-01), Dasse et al.
patent: 5530378 (1996-06-01), Kucharewski, Jr. et al.
patent: 5557136 (1996-09-01), Gordon et al.
patent: 5587623 (1996-12-01), Jones
patent: 5761115 (1998-06-01), Kozicki et al.
patent: 5789277 (1998-08-01), Zahorik et al.
patent: 5789758 (1998-08-01), Reinberg
patent: 5851882 (1998-12-01), Harshfield
patent: 5879955 (1999-03-01), Gonzalez et al.
patent: 5912839 (1999-06-01), Ovshinsky et al.
patent: 5914893 (1999-06-01), Kozicki et al.
patent: 5933365 (1999-08-01), Klersy et al.
patent: 6060723 (2000-05-01), Nakazato et al.
patent: 6084796 (2000-07-01), Kozicki et al.
patent: 6111264 (2000-08-01), Wolstenholme et al.
patent: 6141241 (2000-10-01), Ovshinsky et al.
patent: 6147395 (2000-11-01), Gilgen
patent: 6287887 (2001-09-01), Gilgen
patent: 6316784 (2001-11-01), Zahorik et al.
patent: 6337266 (2002-01-01), Zahorik
patent: 6462353 (2002-10-01), Gilgen
patent: 6549447 (2003-04-01), Fricke et al.
patent: 6687153 (2004-02-01), Lowrey
patent: 6751114 (2004-06-01), Gilton et al.
patent: 6759267 (2004-07-01), Chen et al.
patent: 6781145 (2004-08-01), Doan et al.
patent: 6798692 (2004-09-01), Kozicki et al.
patent: 6879525 (2005-04-01), Van Brocklin et al.
patent: 6940745 (2005-09-01), Kozicki
patent: 6956761 (2005-10-01), Campbell
patent: 6956774 (2005-10-01), Lung et al.
patent: 6969869 (2005-11-01), Hudgens et al.
patent: 6985378 (2006-01-01), Kozicki
patent: 7042760 (2006-05-01), Hwang et al.
patent: 7085154 (2006-08-01), Cho et al.
patent: 7092283 (2006-08-01), Jeong et al.
patent: 7110286 (2006-09-01), Choi et al.
patent: 7126846 (2006-10-01), Ha et al.
patent: 7126847 (2006-10-01), Ha et al.
patent: 7142450 (2006-11-01), Kozicki
patent: 7169635 (2007-01-01), Kozicki
patent: 7180771 (2007-02-01), Cho et al.
patent: 7233177 (2007-06-01), Hsu et al.
patent: 7236393 (2007-06-01), Cho et al.
patent: 07-058204 (1993-08-01), None
patent: 96/41380 (1996-12-01), None

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