Control system for multi-layer chemical mechanical polishing...

Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means

Reexamination Certificate

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C438S959000, C700S121000

Reexamination Certificate

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11233625

ABSTRACT:
A method for controlling an apparatus to perform a multi-layer chemical mechanical polishing (CMP) process with a polishing rate for a plurality of process runs. For each process run, a multilayered structure with a first thickness formed on a wafer is polished and a second thickness of the multilayered structure is predetermined to be polished away. The method comprises steps of receiving a post-CMP thickness information of the multilayered structure of a first process run, wherein for the first process run, the CMP process is performed for a first CMP process time. Then, a second CMP process time is determined according to the first CMP process time, the first thickness and the post-CMP thickness. Further, the second CMP process time is provided to the apparatus for processing a second process run posterior to the first process run.

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patent: 7097534 (2006-08-01), Yampolskiy et al.
patent: 2002/0058460 (2002-05-01), Lee et al.
patent: 2004/0111175 (2004-06-01), Kim et al.
patent: 2005/0153557 (2005-07-01), Cho et al.
patent: 2005/0197046 (2005-09-01), Aoyagi et al.

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