X-ray or gamma ray systems or devices – Specific application – Diffraction – reflection – or scattering analysis
Reexamination Certificate
2008-07-29
2008-07-29
Yun, Jurie (Department: 2882)
X-ray or gamma ray systems or devices
Specific application
Diffraction, reflection, or scattering analysis
C378S089000
Reexamination Certificate
active
07406153
ABSTRACT:
Apparatus for analysis of a sample includes a radiation source, which is configured to direct a beam of radiation along a beam axis to impinge on a target area on a surface of the sample. A detector assembly is configured to sense the radiation scattered from the sample. A beam control assembly includes a beam blocker, which has a lower side adjoining the surface of the sample, and which contains front and rear slits perpendicular to the lower side that together define a beam plane that contains the beam axis and passes through the target area. The front slit is located between the radiation source and the target area, and the rear slit is located between the target area and the detector assembly.
REFERENCES:
patent: 4725963 (1988-02-01), Taylor et al.
patent: 4989226 (1991-01-01), Woodbury et al.
patent: 5151588 (1992-09-01), Kiri et al.
patent: 5574284 (1996-11-01), Farr
patent: 5619548 (1997-04-01), Koppel
patent: 5740226 (1998-04-01), Komiya et al.
patent: 5923720 (1999-07-01), Barton et al.
patent: 5949847 (1999-09-01), Terada et al.
patent: 6041098 (2000-03-01), Touryanski et al.
patent: 6192103 (2001-02-01), Wormington et al.
patent: 6226347 (2001-05-01), Golenhofen
patent: 6226349 (2001-05-01), Schuster et al.
patent: 6381303 (2002-04-01), Vu et al.
patent: 6389102 (2002-05-01), Mazor et al.
patent: 6453006 (2002-09-01), Koppel et al.
patent: 6507634 (2003-01-01), Koppel et al.
patent: 6512814 (2003-01-01), Yokhin et al.
patent: 6556652 (2003-04-01), Mazor et al.
patent: 6625250 (2003-09-01), Houge
patent: 6639968 (2003-10-01), Yokhin et al.
patent: 6643354 (2003-11-01), Koppel et al.
patent: 6680996 (2004-01-01), Yokhin et al.
patent: 6711232 (2004-03-01), Janik
patent: 6744950 (2004-06-01), Aleksoff
patent: 6750952 (2004-06-01), Grodnensky et al.
patent: 6771735 (2004-08-01), Janik et al.
patent: 6813338 (2004-11-01), Takata et al.
patent: 6895075 (2005-05-01), Yokhin et al.
patent: 7242743 (2007-07-01), Fewster
patent: 2001/0028699 (2001-10-01), Iwasaki
patent: 2001/0043668 (2001-11-01), Hayashi et al.
patent: 2002/0097837 (2002-07-01), Fanton et al.
patent: 2002/0110218 (2002-08-01), Koppel et al.
patent: 2003/0157559 (2003-08-01), Omote et al.
patent: 2004/0052330 (2004-03-01), Koppel et al.
patent: 2004/0156474 (2004-08-01), Yokhin et al.
patent: 2004/0218717 (2004-11-01), Koppel et al.
patent: 2006/0062351 (2006-03-01), Yokhin et al.
patent: 09308339 (1997-12-01), None
Jones, et al., “Small angle x-ray scattering for sub-100 nm pattern characterization”, Applied Physics Letters 83:19 (2003), pp. 4059-4061.
Stommer, “X-ray scattering from silicon surfaces”, in Semiconductor International (May 1, 1998).
Yoneda, “Anomalous surface reflection of X Rays”, Physical Review 131, pp. 2010-2013, 1963.
Stommer, et al., “Characterization of semiconductor materials by X-ray scattering”, Electrochemical Society Proceedings vol. 99-16, pp. 117-133, 1999.
Bowen, et al., “X-Ray metrology by diffraction and reflectivity”, Characterization and Metrology for ULSI Technology, 2000 International Conference (American Institute of Physics, 2001).
Ulyanekov, “Introduction to high resolution X-Ray diffraction”, Workshop on X-ray characterization of thin layers (Uckley, May 21-23, 2003).
Naudon, et al., “New apparatus for grazing X-ray reflectometry in the angle-resoived dispresive mode”, J. Appl. Cryst. 1989, vol. 22, pp. 46-464.
F. Neissendorfer, et al., “The Energy-dispersive reflectometer/diffractometer at BESSY-I”, Meas. Sci. Technol. 10(1999) 354-361.
A.R. Powell, et al., “X-ray diffraction and reflectivity characterization of SiGe superlattice structures”, Semicond. Sci. Technol. 7(1992), 627-631.
Jordan Valley Semiconductors Ltd.
Smith , Gambrell & Russell, LLP
Yun Jurie
LandOfFree
Control of X-ray beam spot size does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Control of X-ray beam spot size, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Control of X-ray beam spot size will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2771641