Control of time-dependent haze in the manufacture of integrated

Details Control of time-dependent haze in the manufacture of integrated Control of time-dependent haze in the manufacture of integrated

1992-12-15

1994-10-04

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

437225, H01L 2100, H01L 2102, B44C 122, C03C 1500

Patent

active

053523288

ABSTRACT:
The onset of haze on silicon wafers is controlled by treating the wafers with a chemical selected from the group consisting of hot water and isopropyl alcohol and then storing the treated wafers in an inert atmosphere such as nitrogen or argon.

REFERENCES:
Matsushita, Processing of Compound Semiconductor Surfaces, CA98(26):226448n, 1983.
Hiari, Manufacture of Semiconductor Devices, CA114(20):197923e, 1990.

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