Control of poly-Si depletion in CMOS via gas phase doping

Details Control of poly-Si depletion in CMOS via gas phase doping Control of poly-Si depletion in CMOS via gas phase doping

2008-05-27

2010-02-02

Dang, Phuc T (Department: 2892)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S585000, C438S602000, C257S412000, C257S413000

Reexamination Certificate

active

07655551

ABSTRACT:
A method to control the poly-Si depletion effect in CMOS structures utilizing a gas phase doping process which is capable of providing a high concentration of dopant atoms at the gate dielectric/poly-Si interface is provided. The present invention also provides CMOS structure including, for example, nFETs and/or pFETs, that are fabricated utilizing the gas phase doping technique described herein.

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