Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation
Reexamination Certificate
2005-05-24
2005-05-24
Chaudhuri, Olik (Department: 2823)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Responsive to electromagnetic radiation
C438S143000, C438S310000, C438S471000, C438S473000, C438S795000
Reexamination Certificate
active
06897084
ABSTRACT:
The present invention is directed to a single crystal Czochralski-type silicon wafer, and a process for the preparation thereof, which has at least a surface layer of high resistivity, the layer having an interstitial oxygen content which renders it incapable of forming thermal donors in an amount sufficient to affect resistivity upon being subjected to a conventional semiconductor device manufacturing process. The present invention further directed to a silicon on insulator structure derived from such a wafer.
REFERENCES:
patent: 4548654 (1985-10-01), Tobin
patent: 4851358 (1989-07-01), Huber
patent: 5024723 (1991-06-01), Goesele et al.
patent: 5189500 (1993-02-01), Kusunoki
patent: 5327007 (1994-07-01), Imura et al.
patent: 5374564 (1994-12-01), Bruel
patent: 5401669 (1995-03-01), Falster et al.
patent: 5403406 (1995-04-01), Falster et al.
patent: 5436175 (1995-07-01), Nakato et al.
patent: 5502010 (1996-03-01), Nadahara et al.
patent: 5502331 (1996-03-01), Inoue et al.
patent: 5508207 (1996-04-01), Horai et al.
patent: 5539245 (1996-07-01), Imura et al.
patent: 5593494 (1997-01-01), Falster
patent: 5611855 (1997-03-01), Wijaranakula
patent: 5641353 (1997-06-01), Hara et al.
patent: 5788763 (1998-08-01), Hayashi et al.
patent: 5882987 (1999-03-01), Srikrashnan
patent: 5939770 (1999-08-01), Kageyama
patent: 5944889 (1999-08-01), Park et al.
patent: 5994761 (1999-11-01), Falster et al.
patent: 6180220 (2001-01-01), Falster et al.
patent: 6190631 (2001-02-01), Falster et al.
patent: 6191010 (2001-02-01), Falster
patent: 6204152 (2001-03-01), Falster et al.
patent: 6236104 (2001-05-01), Falster
patent: 6245645 (2001-06-01), Mitani et al.
patent: 6284384 (2001-09-01), Wilson et al.
patent: 6306733 (2001-10-01), Falster et al.
patent: 6336968 (2002-01-01), Falster
patent: 6339016 (2002-01-01), Torack et al.
patent: 6361619 (2002-03-01), Falster et al.
patent: 6432197 (2002-08-01), Falster
patent: 6485807 (2002-11-01), Park
patent: 6537368 (2003-03-01), Falster et al.
patent: 6537655 (2003-03-01), Wilson et al.
patent: 6544656 (2003-04-01), Abe et al.
patent: 6579779 (2003-06-01), Falster
patent: 6586068 (2003-07-01), Falster et al.
patent: 6666915 (2003-12-01), Yang et al.
patent: 6669777 (2003-12-01), Kononchuk et al.
patent: 6673147 (2004-01-01), Kononchuk et al.
patent: 20010032581 (2001-10-01), Wilson et al.
patent: 20020170631 (2002-11-01), Falster et al.
patent: 20020179006 (2002-12-01), Borgini et al.
patent: 0 942 078 (1999-09-01), None
patent: 1 087 041 (2001-03-01), None
patent: 7321120 (1995-12-01), None
patent: 7335657 (1995-12-01), None
patent: 11067781 (1999-03-01), None
patent: 11150119 (1999-06-01), None
patent: WO 9845507 (1998-10-01), None
patent: WO 0008677 (2000-02-01), None
patent: WO 0077830 (2000-12-01), None
C. Londos et al. “Effect of Oxygen Concentration on the Kinetics of Thermal Donor Formation in Silicon at Temperatures Between 350 and 500° C.” Appl. Phys. Lett., vol. 62, No. 13 (1993) pp. 1525-1526.
W. Kaiser “Electrical and Optical Properties of Heat-Treated Silicon” Physical Review, vol. 105, No. 6 (1957) pp. 1751-1756.
W. Kaiser et al. “Mechanism of the Formation of Donor States in Heat-Treated Silicon” Physical Review, vol. 112, No. 5 (1958) pp. 1546-1554.
N. Cheung “Plasma Immersion Ion Implantation for Semiconductor Processing” Materials Chemistry & Physics, vol. 46 (1996) pp. 132-139.
M. Claybourn et al. “Thermal Donor Formation and the Loss of Oxygen From Solution in SIlicon Heated at 450° C” Appl. Phys. Lett., vol. 52, No. 25 (1988) pp. 2139-2141.
Abe et al. “High Resistivity CZ Silicon for RF Applications Substituting GaAs” Electrochem. Soc. Proc., vol. 2000-17, pp. 491-500.
Abe et al. “Defect-Free Surfaces of Bulk Wafers by Combination of RTA and Crystal Growth Conditions” (publication information unknown).
Abe et al. “Innovated Silicon Crystal Growth and Wafering Technologies” Electrochemical Soc. Proceedings, vol. 97-3 (1997) pp. 123-133.
Chiou “The Effects of Preheatings on Axial Oxygen Precipitation Uniformity in Czochralski Silicon Crystals” J. Electrochem. Soc., vol. 139, No. 6 (Jun. 1992) pp 1680-1684.
Claybourn et al. “Thermal Donor Formation and the Loss of Oxygen From Solution in Silicon Heated at 450° C.” Appl. Phys. Lett., vol. 52, No. 25 (1988) pp. 2139-2141.
Jacob et al. “Influence of RTP on Vacancy Concentrations” Mat. Res. Soc. Symp. Proc., vol. 490 (1998) pp. 129-134.
Pagani et al. “Spatial Variations on Oxygen Precipitation in Silicon After High Temperature Rapid Thermal Annealing” Appl. Physl. Lett., vol. 70, No. 12 (Mar. 1997) pp. 1572-1574.
Zimmermann et al. “Gold and Platinum Diffusion: The Key to the Understanding of Intrinsic Point Defect Behavior in Silicon” Appl. Phys. A., vol. 55 (1992) pp. 121-134.
Zimmermann et al. “Investigation of the Nucleation of Oxygen Precipitates in Czochralski Silicon at an Early Stage” Appl. Phys. Lett., vol. 60, No. 26 (1992) pp. 3250-3252.
Zimmermann et al. “The Modeling of Platinum Diffusion in Silicon Under Non-Equilibrium Conditions” J. Electrochem. Soc., vol. 139, No. 1 (1992) pp. 256-262.
Zimmerman et al. “Vacancy Concentration Wafer Mapping in Silicon” J. Crystal Growth, vol. 129 (1993) pp. 582-592.
Binns Martin Jeffrey
Falster Robert J.
Libbert Jeffrey L.
Brewster William M.
Chaudhuri Olik
MEMC Electronic Materials , Inc.
Senniger Powers
LandOfFree
Control of oxygen precipitate formation in high resistivity... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Control of oxygen precipitate formation in high resistivity..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Control of oxygen precipitate formation in high resistivity... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3401359