4. Metal treatment
  5. Barrier layer stock material, p-n type
  6. With recess, void, dislocation, grain boundaries or channel...

Martin Jeffrey Binns

Inventor

Rate now
  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

Inventor

active

Control of oxygen precipitate formation in high resistivity...

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation
Reexamination Certificate

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Process for producing thermally annealed wafers having...

Semiconductor device manufacturing: process – Gettering of substrate – By implanting or irradiating
Reexamination Certificate

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Thermal annealing process for producing low defect density...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth with a subsequent step acting on the...
Reexamination Certificate

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Thermally annealed wafers having improved internal gettering

Metal treatment – Barrier layer stock material – p-n type – With recess – void – dislocation – grain boundaries or channel...
Reexamination Certificate

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Thermally annealed, low defect density single crystal silicon

Stock material or miscellaneous articles – Circular sheet or circular blank
Reexamination Certificate

  [ 0.00 ] – not rated yet Voters 0   Comments 0

No associations

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Martin Jeffrey Binns does not yet have a rating. At this time, there are no reviews or comments for this inventor.

If you have personal experience with Martin Jeffrey Binns, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Martin Jeffrey Binns will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-P-2464139

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.

Canada

 Charities
 Companies
 MP Candidates
 Patents
 Employee Salary Disclosure

World

 Places of the World
 Scientific Papers

United States

 Banks
 Companies
 Counties
 Patents
 Employee Salary Disclosure