Control of oxygen in silicon crystals

Details Control of oxygen in silicon crystals Control of oxygen in silicon crystals

1975-10-22

1977-08-09

Emery, Stephen J.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

23273SP, 423324, B01J 1718, C01B 3302

Patent

active

040408957

ABSTRACT:
The seed to tail oxygen concentration gradient in silicon crystals, which are drawn from a silicon melt contained in a silica vessel according to the Czochralski process, is controlled by a process employing stop-go crucible rotation to provide fluid shearing at the melt-crucible interface.

REFERENCES:
patent: 3353914 (1967-11-01), Pickar
patent: 3490877 (1970-01-01), Bollen
patent: 3873463 (1975-03-01), Tolksdorf
patent: 3929557 (1975-12-01), Goodrum
IBM Tech. Discl. Bull., vol 14, No. 5, Oct. 1971, p. 1631.
IBM Tech. Discl. Bull., vol. 13, No. 6, Nov. 1970, p. 1571.
Scheel, Journal of Crystal Growth, vol. 13/14, 1972, pp. 560-565.
IBM Tech. Discl. Bull., Mueller-Krumbhaar et al., vol. 17, No. 3, Aug. '74, pp. 903-904.

Affiliated with

Also associated with

Rating

Control of oxygen in silicon crystals does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Control of oxygen in silicon crystals, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Control of oxygen in silicon crystals will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1226317