Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1984-05-03
1986-05-27
Lacey, David L.
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
156617SP, 156DIG89, 156DIG64, 148DIG22, 148DIG41, C30B 2702
Patent
active
045914095
ABSTRACT:
The disclosure relates to a method for producing single crystal silicon from a polycrystalline silicon melt wherein dopants such as oxygen and nitrogen are uniformly distributed in the crystal both along the crystal axis and radially therefrom. This is accomplished by identifying the correct species in the melt and above the melt and determining the thermochemical equilibrium between the two chemical species which lead to a change of the composition of the silicon single crystal during the entire growth process. This approach effectively circumvents the segregation coefficient during the growth process through the control of the concentration of the dopants in the melt.
REFERENCES:
patent: 3615878 (1971-10-01), Chang et al.
patent: 4090851 (1978-05-01), Berkman et al.
patent: 4400232 (1983-08-01), Ownby et al.
patent: 4415401 (1983-11-01), Wald et al.
patent: 4443411 (1984-04-01), Kalejs
Chemical Abstract 96(8): 60961f, Carlberg et al., 1982.
Larrabee Graydon B.
Witter David E.
Ziem Eva A.
Comfort James T.
Groover Robert O.
Hoel Carlton H.
Lacey David L.
Texas Instruments Incorporated
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