Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-11-26
1998-10-20
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257344, 257408, 257607, 257655, H01L 2976, H01L 2994, H01L 31062, H01L 31113
Patent
active
058250662
ABSTRACT:
An improved manufacturing process and an improved device made by the process for retarding diffusion of implanted dopants during subsequent high-temperature processing. A layer of an electrically inactive species is implanted well below the active dopant layers, and the excess interstitials due to damage from the electrically inactive species layer form a retarding gradient which opposes dopant diffusion. Using this process, shallow source-drain junctions can be achieved, and lateral encroachment of LDD implants under the gate can be minimized.
REFERENCES:
patent: 4558507 (1985-12-01), Okabayashi et al.
patent: 5019520 (1991-05-01), Komori et al.
patent: 5145794 (1992-09-01), Kase et al.
patent: 5223445 (1993-06-01), Fuse
patent: 5245208 (1993-09-01), Eimori
patent: 5399883 (1995-03-01), Baliga
patent: 5468974 (1995-11-01), Aronowitz et al.
patent: 5514902 (1996-05-01), Kawasaki et al.
patent: 5585286 (1996-12-01), Aronowitz et al.
"Suppression of the Lateral Diffusion Under the Gate of an MOS Transistor by Argon Implantation", J.C. Marchetaux et al., IEEE Transactions on Electron Device, ED-32, No. 1985, pp. 2508-2510.
"The Effect of Argon Implantation on the Conductivity of Boron Implanted Silicon", I.R. Sanders et al., Solid State Electronics, 1977, vol. 20, pp. 703-707.
"Effect of Argon Implantation on the Activation of Boron Implanted in Silicon", A. Milgram et al., Applied Physics Letters, May 15, 1983, vol. 42, No. 10, pp. 878-880.
Milgram et al., Applied Physics Letters 42, pp. 878-880 (1983).
Arnowitz, et al., J. Appl. Phys, 63(4), 15 Feb. 1988, pp. 1037-1040.
Delfino, et al., Applied Physics Letters 44(6), Mar. 15 1984, pp. 594-596
Advanced Micro Devices , Inc.
Fisher Gerald M.
Ngo Ngan V.
LandOfFree
Control of juction depth and channel length using generated inte does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Control of juction depth and channel length using generated inte, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Control of juction depth and channel length using generated inte will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-247394