Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-10-09
2007-10-09
Booth, Richard A. (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE29112
Reexamination Certificate
active
10977732
ABSTRACT:
An MOS device is formed including a semiconductor layer of a first conductivity type, and first and second source/drain regions of a second conductivity type formed in the semiconductor layer proximate an upper surface of the semiconductor layer, the first and second source/drain regions being spaced apart relative to one another. A drift region is formed in the semiconductor layer proximate the upper surface of the semiconductor layer and at least partially between the first and second source/drain regions. An insulating layer is formed on at least a portion of the upper surface of the semiconductor layer and above at least a portion of the drift region. A gate is formed on the insulating layer and at least partially between the first and second source/drain regions. The MOS device further includes a shielding structure formed on the insulating layer above at least a portion of the drift region. The shielding structure is configured such that an amount of hot carrier injection degradation in the MOS device is controlled as a function of an amount of coverage of the shielding structure over an upper surface of the drift region.
REFERENCES:
patent: 6614089 (2003-09-01), Nakamura et al.
patent: 2005/0191815 (2005-09-01), Shibib et al.
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Gammel Peter L.
Kizilyalli Isik C.
Mastrapasqua Marco G.
Shibib Muhammed Ayman
Xie Zhijian
Agere Systems Inc.
Booth Richard A.
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