Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-07-04
2006-07-04
Ho, Tu-Tu (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S406000, C257S410000
Reexamination Certificate
active
07071519
ABSTRACT:
Methods and systems are disclosed that facilitate formation of dielectric layers having a particular composition profile by forming the dielectric layer as a number of sub-layers. The sub-layers are thin enough so that specific relative compositions can be achieved for each layer and, therefore, the sub-layers collectively yield a dielectric layer with a particular profile. The formation of individual sub layers is accomplished by controlling one or more processing parameters for a chemical vapor deposition process that affect relative compositions. Some processing parameters that can be employed include wafer temperature, pressure, and precursor flow rate.
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Chambers James Joseph
Colombo Luigi
Pacheco Rotondaro Antonio Luis
Visokay Mark
Brady III Wade James
Garner Jacqueline J.
Ho Tu-Tu
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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