Control of etch rate ratio of SiO.sub.2 /photoresist for quartz

Details Control of etch rate ratio of SiO.sub.2 /photoresist for quartz Control of etch rate ratio of SiO.sub.2 /photoresist for quartz

1984-01-30

1985-04-16

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156657, 1566591, 156668, 204192E, 252 791, B44C 122, C03C 1500, C03C 2506, B29C 1708

Patent

active

045114307

ABSTRACT:
A method of controlling the etch rate ratio of SiO.sub.2 /photoresist (PR) in a quartz planarization etch back process involves etching with a gaseous mixture containing CF.sub.4 and either CHF.sub.3 or C.sub.x F.sub.y with x>1 or O.sub.2. The preferred SiO.sub.2 /PR ratio of 1.2.+-.0.1 is obtained by either adding CHF.sub.3 to decrease the etch rate of the PR or by adding O.sub.2 to increase the etch rate of the PR.

REFERENCES:
patent: 3940506 (1976-02-01), Heinecke
patent: 4324611 (1982-04-01), Vogel et al.
patent: 4344816 (1982-08-01), Craighead et al.
J. Electrochem. Soc.: Solid-State Science and Technology, vol. 128, No. 2, Feb. 1981, Planarization of Phosphorus-Doped Silicon Dioxide by A. C. Adams and C. D. Capio, pp. 423-429.

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