Control of etch rate of silicon dioxide in boiling phosphoric ac

Details Control of etch rate of silicon dioxide in boiling phosphoric ac Control of etch rate of silicon dioxide in boiling phosphoric ac

1976-11-18

1978-05-30

Klein, David

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156653, 156657, 156662, 252 792, H01L 21308

Patent

active

040922111

ABSTRACT:
The etch rate of silicon dioxide, particularly thermally grown silicon dioxide, in boiling phosphoric acid, can be controlled by deliberately adding additional silicate to the acid. For thermally grown silicon dioxide, the etch rate can be reduced from about 5A per minute with no added silicate, to about 0.5A/minute with 1 gram of added silicate to about 1 liter of acid.

REFERENCES:
patent: 3479237 (1969-11-01), Bergh et al.
patent: 3607480 (1971-09-01), Harrap et al.
patent: 3764423 (1973-10-01), Hauser et al.
patent: 3788915 (1974-01-01), Gulla
patent: 3808069 (1974-04-01), Caffrey et al.
patent: 3839534 (1974-10-01), Matsumoto et al.
patent: 3871931 (1975-03-01), Godbar
patent: 3951711 (1976-04-01), Snyder
patent: 3966517 (1976-06-01), Claes et al.

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