Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Patent
1997-01-10
1998-06-02
Angebranndt, Martin
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
438733, 438719, 156346C, 20419237, 20429831, H01L 2100
Patent
active
057599220
ABSTRACT:
An etch process to substantially eliminate notching in sub-micron features by exposing a wafer to a chlorine plasma; operating the plasma under conditions which reduce the relative role of ions in the etch (as compared to neutrals in the etch); and essentially eliminating the magnetic field confinement in the transition zone of the etcher, i.e., the zone between the high density source and the wafer.
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Angebranndt Martin
Dennison Lia Pappas
Micro)n Technology, Inc.
Webostad W. Eric
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