Coating processes – Direct application of electrical – magnetic – wave – or... – Plasma
Patent
1991-05-16
1992-12-08
Beck, Shrive
Coating processes
Direct application of electrical, magnetic, wave, or...
Plasma
427249, 427122, 427577, 428408, 423446, B05D 306, C23C 1626
Patent
active
051696762
ABSTRACT:
In depositing an adhering, continuous, polycrystalline diamond film of optical or semiconductor quality on a substrate, as by forming on the substrate a layer of a refractory nitride interlayer and depositing diamond on the interlayer without mechanical treatment or seeding of the substrate or the interlayer, the substrate is heated in a vacuum chamber containing a microwave activated mixture of hydrogen and a gas including carbon, and the size of deposited diamond crystallites and their rate of deposition selectively varied by a bias voltage applied to the substrate.
REFERENCES:
patent: 4940015 (1990-07-01), Kobashi et al.
patent: 4988421 (1991-01-01), Drawl et al.
patent: 5015494 (1991-05-01), Yamazaki
SDJD/IST--ONR Diamond Technology Initiative Symposium, 11-13 Jul. 1989, pr T5; Office of Naval Research, Washington, D.C.; Lee, Y. H., et al., "Electron controlled CVD of Diamond Thin Films on Various Substrates".
SDJD/IST--ONR Diamond Technology Initiative Symposium, 11-13 Jul. 1989, paper TP11; Office of Naval Research, Washington, D.C.; Tzeng, Y. et al., "Diamond Thin Films Grown by Spiral Hollow Cathode Plasma Assisted Chemical Vapor Deposition".
Applied Physics Letters, vol. 60, No.6, 10 Feb. 1992, pp. 698-700; Stoner, B. R., et al., "Textured Diamond Growth on (100) B-SiC via Microwave Plasma Chemical Vapor Deposition".
Johnson Linda F.
Klemm Karl A.
Moran Mark B.
Beck Shrive
Church Stephen J.
Forrest, Jr. John L.
King Roy V.
Sliwka Melvin J.
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