Control of capillary die shaped crystal growth of silicon and ge

Details Control of capillary die shaped crystal growth of silicon and ge Control of capillary die shaped crystal growth of silicon and ge

1977-03-17

1980-01-22

Emery, Stephen J.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156608, 156617SP, 156DIG88, 422246, 422249, B01J 1718

Patent

active

041849078

ABSTRACT:
A method is disclosed of growing a crystalline body of a selected material so that the body has a selected cross-sectional shape. The method includes the steps normally employed in known capillary die processes and further includes observing at least the portion of the surfaces of the growing crystalline body and the meniscus (of melt material from which the body is being pulled) including the solid/liquid/vapor junction in a direction substantially perpendicular to the meniscus surface formed at the junction when the growth of the crystalline body is under steady state conditions. The cross-sectional size of the growing crystalline body can be controlled by determining which points exhibit a sharp change in the amount of reflected radiation of a preselected wavelength and controlling the speed at which the body is being pulled or the temperature of the growth pool of melt so as to maintain those points exhibiting a sharp change at a preselected spatial position relative to a predetermined reference position.

REFERENCES:
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patent: 3428436 (1969-02-01), Tucker
patent: 3493770 (1970-02-01), Dessauer
patent: 3692499 (1972-09-01), Andrychuk
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patent: 3958129 (1976-05-01), Clement
patent: 3998598 (1976-12-01), Bonora
Patzner et al., SCP and Solid State Technology, Oct., 1967, pp. 25-30.
Veeco, New Dyna-Gro Crystal Puller, 2 pages.
Hamco, Crystal Growing Furnace, 4 pages.
Bardsley, J. of Cryst. Growth, 24/25 (Mar. 1974), pp. 369-374.

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