Control of atmosphere surrounding crystal growth zone

Details Control of atmosphere surrounding crystal growth zone Control of atmosphere surrounding crystal growth zone

1980-12-15

1983-11-15

Bernstein, Hiram H.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156DIG89, C30B 1534

Patent

active

044154011

ABSTRACT:
The invention pertains to growth of silicon bodies from a melt and comprises enveloping the liquid/solid interface with a mixture of an inert gas and more than a trace amount of a carbon-containing gas. The carbon-containing gas may be a compound of carbon and oxygen such as CO or CO.sub.2, and oxygen gas also may be introduced to the growth zone.

REFERENCES:
patent: 4040895 (1977-08-01), Patrick
patent: 4118197 (1978-10-01), Mackintosh et al.
patent: 4193974 (1980-03-01), Kotval et al.
Materials Research Bulletin-Labelle et al., Pergamon Press, New York, 1971.
Baker, Oxygen and Carbon Content of Czochroslski Silicon Crystals in Semiconductor Silices 1969-Electrochemical Society, New York.
Akiyama et al., Appl. Physics Lett., vol. 22, No. 2, pp. 630-631, 6/15/73.

Affiliated with

Also associated with

Rating

Control of atmosphere surrounding crystal growth zone does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Control of atmosphere surrounding crystal growth zone, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Control of atmosphere surrounding crystal growth zone will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-158237