Control of a memory matrix with resistance hysteresis elements

Details Control of a memory matrix with resistance hysteresis elements Control of a memory matrix with resistance hysteresis elements

2006-03-03

2009-08-25

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Systems using particular element

Resistive

Reexamination Certificate

active

07580275

ABSTRACT:
A control circuit (1, 11) for a memory matrix is used that defines a write process that uses circuit state transitions between at least two idle circuit states, an all column update circuit state and a column selective update state. In the second. During access the control circuit switches back and forth to the column selective update state (W) from the first idle state (II) during execution of a column selective update command and back and forth to the all-column update state (E) from the second idle state (12) during execution of an all column update command. The control circuit (1, 11) is retained in the first and second idle state (II,12), without switching to the second and first idle state (12, II) between execution of successive column selective update commands and all column update commands respectively.

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