Control layer for a nanoscale electronic switching device

Details Control layer for a nanoscale electronic switching device Control layer for a nanoscale electronic switching device

2005-11-23

2010-06-22

Tran, Tan N (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Test or calibration structure

C257S002000, C257S003000, C257S608000, C257SE27009

Reexamination Certificate

active

07741638

ABSTRACT:
A control layer for use in a junction of a nanoscale electronic switching device is disclosed. The control layer includes a material that is chemically compatible with a connecting layer and at least one electrode in the nanoscale switching device. The control layer is adapted to control at least one of electrochemical reaction paths, electrophysical reaction paths, and combinations thereof during operation of the device.

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Hewlett-Packard Development Company, L.P., Office Action issued by Korean Intellectual Property Office, Application No. 2008-7012213, Dated Feb. 23, 2010.

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