Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-02-22
2008-11-11
Dang, Phuc T. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C438S257000, C365S185040
Reexamination Certificate
active
07449743
ABSTRACT:
A nonvolatile memory device has a floating gate and a control gate. The floating gate incorporates a substantially vertical profile and provides the charge storage mechanism to set a specific threshold voltage. The control gate incorporates a sloped profile to enhance reliability.
REFERENCES:
patent: 5115288 (1992-05-01), Manley
patent: 6462372 (2002-10-01), Wu
patent: 2003/0197219 (2003-10-01), Kim et al.
Arcidiacono Dorotea
Franciarini Stefano Montironi
Dang Phuc T.
Intel Corporation
Kacvinsky LLC
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