Contrast enhancement of electron beam alignment marks

Details Contrast enhancement of electron beam alignment marks Contrast enhancement of electron beam alignment marks

1977-04-08

1978-10-31

Anderson, Bruce C.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

H01J 3700

Patent

active

041236610

ABSTRACT:
High atomic number metals or compounds are used as electron beam registration alignment marks on low atomic number substrates; this combination produces enhanced secondary and backscattered electron video signals over topographical alignment marks of homogeneous materials. To augment the enhanced signal contrast, pairs of alignment marks are placed very close together (less than or equal to 3 micrometers), from which the gap between the pair produces the augmented, enhanced signal contrast. In particular, the backscattered electron signal is enhanced when detected with an energy sensitive collector such as a silicon diode detector.

REFERENCES:
patent: 3875414 (1975-04-01), Prior
"Electron Beam & Ion Beam Fabricated Microwave Switch," Wolf et al., IEEE Trans. on Electron Devices, vol. ED-17, No. 6, Jun. 1970, pp. 446-449.
"Automatic Pattern Positioning of Scanning Electron Beam Exposure," Miyauchi et al., IEEE Trans. on Electron Dev., vol. ED-17, No. 6, pp. 450-457.
"High-Resolution Electron-Beam Fabrication," Hatzakig et al., 10th Symp. on Elect., Ion and Laser Beam Tech., May 1969, pp. 107-114.

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