Contrast based resolution enhancement for photolithographic...

Details Contrast based resolution enhancement for photolithographic... Contrast based resolution enhancement for photolithographic...

2007-11-06

2007-11-06

Chiang, Jack (Department: 2825)

Computer-aided design and analysis of circuits and semiconductor

Nanotechnology related integrated circuit design

C716S030000, C716S030000, C716S030000, C716S030000, C716S030000, C716S030000

Reexamination Certificate

active

10888444

ABSTRACT:
A contrast-based resolution enhancing technology (RET) determines a distribution of contrast values for edge fragments in a design layout or portion thereof. Resolution enhancement is applied to the edge fragments in a way that increases the number of edge fragments having a contrast value that exceeds a predetermined threshold.

REFERENCES:
patent: 4762396 (1988-08-01), Dumant et al.
patent: 5424154 (1995-06-01), Borodovsky
patent: 5502654 (1996-03-01), Sawahata
patent: 5624773 (1997-04-01), Pforr et al.
patent: 5655110 (1997-08-01), Krivokapic et al.
patent: 5723233 (1998-03-01), Garza et al.
patent: 5825647 (1998-10-01), Tsudaka
patent: 5879844 (1999-03-01), Yamamoto et al.
patent: 6016357 (2000-01-01), Neary et al.
patent: 6049660 (2000-04-01), Ahn et al.
patent: 6077310 (2000-06-01), Yamamoto et al.
patent: 6120952 (2000-09-01), Pierrat et al.
patent: 6128067 (2000-10-01), Hashimoto
patent: 6187483 (2001-02-01), Capodieci et al.
patent: 6243855 (2001-06-01), Kobayashi et al.
patent: 6249904 (2001-06-01), Cobb
patent: 6263299 (2001-07-01), Aleshin et al.
patent: 6269472 (2001-07-01), Garza et al.
patent: 6301697 (2001-10-01), Cobb
patent: 6370679 (2002-04-01), Chang et al.
patent: 6425117 (2002-07-01), Pasch et al.
patent: 6453452 (2002-09-01), Chang et al.
patent: 6453457 (2002-09-01), Pierrat et al.
patent: 6467076 (2002-10-01), Cobb
patent: 6499003 (2002-12-01), Jones et al.
patent: 6601231 (2003-07-01), LaCour
patent: 09319067 (1997-12-01), None
patent: WO 01/65315 (2001-09-01), None
Cobb, N., and Y. Granik, “Model-Based OPC Using the MEEF Matrix,”Proceedings of SPIE, vol. 4889:22nd Annual BACUS Symposium on Photomask Technology, Monterey, Calif., Sep. 30-Oct. 4, 2002, p. 147.
Cobb, N., and A. Zakhor, “Experimental Results on Optical Proximity Correction With Variable Threshold Resist Model,”Proceedings of SPIE, vol. 3051:Symposium on Optical Microlithography X, Santa Clara, Calif., Mar. 10-14, 1997, pp. 458-468.
Cobb, N., and A. Zakhor, “Fast, Low-Complexity Mask Design,”Proceedings of SPIE, vol. 2440:Symposium on Optical/Laser Microlithography VIII, Santa Clara, Calif., Feb. 22-24, 1995, pp. 313-327.
Cobb, N., and A. Zakhor, “Fast Sparse Aerial Image Calculation for OPC,”Proceedings of SPIE, vol. 2621:15th Annual BACUS Symposium on Photomask Technology and Management, Santa Clara, Calif., Sep. 20-22, 1995, pp. 534-545.
Cobb, N., and A. Zakhor, “Large Area Phase-Shift Mask Design,”Proceedings of SPIE, vol. 2197:Symposium on Optical/Laser Microlithography VIISan Jose, Calif., Mar. 2-4, 1994, pp. 348-360.
Cobb., N., et al., “Mathematical and CAD Framework for Proximity Correction,”Proceedings of SPIE, vol. 2726:Symposium on Optical Microlithography IX, Santa Clara, Calif., Mar. 13-15, 1996, pp. 208-222.
Cobb, N., and Y. Granik, “Using OPC to Optimize for Image Slope and Improve Process Window,” (Nov. 20, 2002),Proceedings of SPIE, vol. 5130:Photomask Japan, Yokohama, Japan, Apr. 16-18, 2003, p. 42.
Granik, Y., “Generalized MEEF Theory,”Interface 2001, Nov. 2001.
Granik, Y., and N. Cobb, “MEEF as a Matrix,”Proceedings of SPIE, vol. 4562:21st Annual BACUS Symposium on Photomask Technology, Monterey, Calif., Oct. 2-5, 2001, pp. 980-991.
Granik, Y., and N. Cobb, “Two-Dimensional G-MEEF Theory and Applications,”Proceedings of SPIE, vol. 4754:Symposium on Photomask and Next-Generation Lithography Mask Technology IX, Yokohama, Japan, Apr. 23-25, 2002, pp. 146-155.
Maurer, W., et al., “Process Proximity Correction Using an Automated Software Tool,”Proceedings of SPIE, vol. 3334:Optical Microlithography XI, Santa Clara, Calif., Feb. 22-27, 1998, pp. 245-253.
Maurer, W., et al., “Evaluation of a Fast and Flexible OPC Package: OPTISSIMO,”Proceedings of SPIE, vol. 2884:16th Annual Symposium on Photomask Technology and Management, Redwood City, Calif., Sep. 18-20, 1996, pp. 412-418.
Ohnuma, H., et al., “Lithography Computer Aided Design Technology for Embedded Memory in Logic,”Japanese Journal of Applied Physics 37(12B):6686-6688, Dec. 1998.
Torres, J.A., et al., “Contrast-Based Assist Feature Optimization,”Optical Microlithography XV, Proceedings of SPIE 4691:179-187, 2002.
Torres, J.A. et al., “Model Assisted Double Dipole Decomposition,”Optical Microlithography XV, Proceedings of SPIE 4691: 407-417, 2002.

Affiliated with

Also associated with

Rating

Contrast based resolution enhancement for photolithographic... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Contrast based resolution enhancement for photolithographic..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Contrast based resolution enhancement for photolithographic... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3853649