Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1994-12-07
1996-08-06
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257327, 257403, H01L 2976
Patent
active
055436544
ABSTRACT:
A Fermi-threshold field effect transistor includes a contoured-tub region of the same conductivity type as the source, drain and channel regions and having nonuniform tub depth. The contoured-tub is preferably deeper under the source and/or drain regions than under the channel region. Thus, the tub-substrate junction is deeper under the source and/or drain regions than under the channel region. The diffusion capacitance is thereby reduced compared to a tub having a uniform tub depth, so that a high saturation current is produced at low voltages. The contoured-tub may be formed by an additional implant into the substrate using the gate as a mask.
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Bowers Courtney A.
Crane Sara W.
Thunderbird Technologies, Inc.
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