Continuously adjustable neutral density area filter

Photocopying – Projection printing and copying cameras – Illumination systems or details

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C355S053000

Reexamination Certificate

active

06744494

ABSTRACT:

FIELD OF THE INVENTION
The present invention generally relates to dose control in continuous wave and excimer laser based lithography tools.
BACKGROUND OF THE INVENTION
Typically, semiconductors wafers in integrated circuit fabrication are exposed to irradiation of a light source in an exposure tool. In the exposure tool the irradiation light passes through an optical column with optical elements such as spherical and aspheric collimator lenses and blinds. After the optical column the light traverses a reticle with device patterns on it and the device patterns are projected onto a wafer below. The wafer is covered by a photoresist. The chemical composition of the photoresist is changed by the irradiation with light and a latent image is formed in the photoresist. After irradiation of a first target area either the wafer is moved from a first position to a second position with the optical column being fixed or the optical column is moved from a first position to a second position with the wafer being fixed, and a second target area on the wafer is irradiated. Finally, the wafer is moved to another tool where the photoresist is developed and partly removed so as to form a protection layer including windows on the wafer. The protection layer corresponds to the device pattern on the reticle, and etchants react with the semiconductor wafer or ions are implanted into the semiconductor wafer through the windows of the protection layer.
The light source in the exposure tool may be a pulsed light source or a continuous wave light source. In case of a pulsed light source typically multiple pulses are necessary to form a complete projection of the device pattern in the photoresist layer on the semiconductor wafer. For instance, a single laser pulse
301
may have a free running output of approximately 250-300 millijoules (mJ) per pulse. However, only a very small portion of the output is used for exposure, namely a narrow band of frequency that may contain approximately 5% of the total energy of the light output of the laser.
Typically, the energy of the laser pulses varies. Since however the total amount of energy being absorbed by the photoresist must be the same in each irradiated target areas in order to ensure critical dimension (CD) uniformity, there are “averaging” means employed between the laser source and the wafer in order to obtain an exposure energy in the photoresist that is substantially equal for all target areas. As “averaging” means attenuator filters are used that reduce the power per pulse. For instance, 50 pulses are used to expose the photoresist in one target area. This is a greater number of pulses than is necessary for a complete exposure dose. However, running the exposure with more but less intensive laser pulses allows a dose control within 1% despite variations in energy output from pulse to pulse.
Pulse stability in the current version of deep ultraviolet (DUV) excimer lasers has improved significantly since their introduction. However the next generation lasers including argon fluoride (ArF) and fluoride (F2) lasers will have less pulse stability until this laser technology matures which is to be expected to be several device technology generations away. It would be time consuming and costly to change mask filters with each variation of the light source.
It is therefore desirable to provide a means that can easily be adapted to the varying requirements of averaging the pulse power of different light sources.
The present invention seeks to provide an optimized exposure tool which reduces the number of processing steps and complexity of the prior art.


REFERENCES:
patent: 5437946 (1995-08-01), McCoy
patent: 6013401 (2000-01-01), McCullough et al.
patent: 1 291 721 (2003-03-01), None
patent: 1 292 721 (2003-03-01), None
patent: 61-104622 (1986-05-01), None
patent: 61104622 (1986-05-01), None
patent: 04-080760 (1992-03-01), None
patent: 04080760 (1992-03-01), None
patent: 05190444 (1993-07-01), None
patent: 05-190444 (1993-07-01), None
patent: 11219893 (1999-08-01), None
patent: 11-219893 (1999-08-01), None
PCT/US02/36836 PCT Search Report mailed Apr. 11, 2003.
International Search Report PCT/US02/36836.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Continuously adjustable neutral density area filter does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Continuously adjustable neutral density area filter, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Continuously adjustable neutral density area filter will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3317084

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.