Continuous highly conductive metal wiring structures and method

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

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Details

438633, 438637, 438641, 438648, 438661, H01L 2100

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active

059306696

ABSTRACT:
The present relates to a method of fabricating wiring structures which contain a continuous, single crystalline conductive material extending through the structure. This is achieved in the present invention by utilizing an open-bottomed via liner structure.

REFERENCES:
patent: 4717462 (1988-01-01), Homma et al.
patent: 4789648 (1988-12-01), Chow et al.
patent: 5006484 (1991-04-01), Harada
patent: 5051812 (1991-09-01), Onuki et al.
patent: 5081064 (1992-01-01), Inoue et al.
patent: 5082802 (1992-01-01), Gelsomini
patent: 5093710 (1992-03-01), Higuchi
patent: 5312775 (1994-05-01), Fujii et al.
patent: 5385868 (1995-01-01), Choa et al.
patent: 5629236 (1997-05-01), Wada et al.
patent: 5744376 (1998-04-01), Chan et al.
patent: 5783282 (1998-07-01), Leiphart
patent: 5817572 (1998-10-01), Chiang et al.
patent: 5821168 (1998-10-01), Jain

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