Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Fluid growth from gaseous state combined with subsequent...
Reexamination Certificate
2011-08-30
2011-08-30
Lindsay, Jr., Walter L (Department: 2812)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Fluid growth from gaseous state combined with subsequent...
C257SE21090, C118S718000
Reexamination Certificate
active
08008174
ABSTRACT:
Embodiments of the invention generally relate to a method for forming a multi-layered material during a continuous chemical vapor deposition (CVD) process. In one embodiment, a method for forming a multi-layered material during a continuous CVD process is provided which includes continuously advancing a plurality of wafers through a deposition system having at least four deposition zones. Multiple layers of materials are deposited on each wafer, such that one layer is deposited at each deposition zone. The methods provide advancing each wafer through each deposition zone while depositing a first layer from the first deposition zone, a second layer from the second deposition zone, a third layer from the third deposition zone, and a fourth layer from the fourth deposition zone. Embodiments described herein may be utilized to form an assortment of materials on wafers or substrates, especially for forming Group III/V materials on GaAs wafers.
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He Gang
Higashi Gregg
Alta Devices, Inc.
Lindsay, Jr. Walter L
Sawyer Law Group P.C.
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