Continuous etching process and apparatus therefor

Details Continuous etching process and apparatus therefor Continuous etching process and apparatus therefor

1990-10-31

1992-07-07

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156657, 1566591, 156345, H01L 21306, B44C 122

Patent

active

051279878

ABSTRACT:
A plurality of resist membranes are formed on a membrane of goods to be etched. The top resist is patterned by light beam, laser beam, X-rays, or electron beams. The wafer is transferred to a first unit into which discharging gas is introduced and plasma is generated in order to dry-etch the multilayer resists. The multilayer is transferred to a second unit in vacuum environment. In the second unit, the membrane of the wafer is dry-etched in a predetermined depth. The wafer then is transferred to a third unit in vacuum atmosphere so as to remove part of the resist depending a mask pattern and treat the resist by plasma.

REFERENCES:
patent: 4482419 (1984-11-01), Tsukada et al.
patent: 4487678 (1984-12-01), Noguchi et al.
patent: 4825808 (1989-05-01), Takahashi et al.
patent: 4927484 (1990-05-01), Mitomi
patent: 5013385 (1991-05-01), Maher et al.

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