Content addressable memory storage device

Details Content addressable memory storage device Content addressable memory storage device

1999-02-03

2000-03-28

Nelms, David

Static information storage and retrieval

Associative memories

Ferroelectric cell

365154, 36518907, G11C 1500

Patent

active

060440058

ABSTRACT:
Binary and ternary content addressable memory (CAM) cells are disclosed, which permit the construction of high-performance, large-capacity CAM arrays. The CAM cells have a reduced match line power dissipation, and a reduced compare line loading that is data independent, and full swing comparator output. Match line power dissipation is limited by means of a NAND chain match line. Loading on compare lines is limited by connecting compare lines to the gate terminals of the CAM cell comparator. Local precharge devices at the output of the comparator provide full swing compare logic levels for faster matching. The same precharge devices also serve as an active reset for the comparator. Comparator circuits for ternary CAM cells further employ disable means, which makes the comparison operation conditional on the value stored in the mask memory element. The use of disable means allows the mask and data to be stored separately in a non-encoded form. As a result, mask and data information may be read and written independently of one another.

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K. Schultz et al, "A Survey of Content Addressable Memory Cells", Integration, the VSI Journal, vol. 23, pp. 171-188, 1997.
K. Schultz et al, "Fully-Parallel 30-MHz, 2.5-Mb CAM", Journal of Solid State Circuits, vol. 33, pp. 1690-1696, Nov. 1998.

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