Content addressable memory having binary and ternary modes of op

Details Content addressable memory having binary and ternary modes of op Content addressable memory having binary and ternary modes of op

1999-07-23

2000-08-22

Mai, Son

Static information storage and retrieval

Associative memories

Ferroelectric cell

36518907, G11C 1500

Patent

active

061082279

ABSTRACT:
A content addressable memory (CAM) includes a number of novel CAM cells that can be switchable between a binary mode of operation and a ternary mode of operation. According to one embodiment, a novel CAM cell (100) can include a switchable impedance path (104) arranged in series with a compare circuit (110). A switchable impedance path (104) can include a first impedance path (106) arranged in series with a second impedance path (108). The first impedance path (106) can be controlled by a mode value (MODE) and the second impedance path (108) can be controlled by a mask value (/M).

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