Content addressable memory cell having improved layout

Static information storage and retrieval – Associative memories – Ferroelectric cell

Reexamination Certificate

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C365S190000, C365S189070

Reexamination Certificate

active

06873532

ABSTRACT:
A CAM cell comprises a pair of SRAM cells, each of which comprise a pair of cross coupled inverters for storing a data value and a pair of access devices for accessing a complementary pair of bit lines. The CAM cell ether comprises a pair of compare circuits, each for comparing said data value stored in one of said SRAM cells with a search data value provided on a corresponding search line. The CAM cell has an equivalent number of n-channel and p-channel devices. The CAM cell uses p-channel transistors as access transistors to the SRAM cells in order to improve the efficiency of the layout of the cell array. The implementation ensures a balanced number of p-channel and n-channel devices per cell while still providing excellent functional characteristics.

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