Content addressable memory cell architecture

Details Content addressable memory cell architecture Content addressable memory cell architecture

2006-03-07

2006-03-07

Tran, Michael (Department: 2827)

Static information storage and retrieval

Associative memories

Ferroelectric cell

C365S156000

Reexamination Certificate

active

07009861

ABSTRACT:
A Content Addressable Memory (CAM) cell is presented which provides for improved speed and enhanced reliability. The CAM architecture enables maximal conduction of one of the output series pass transistors in the case of a data mismatch during a search operation thereby producing a minimal voltage drop, low impedance path for charging the bootstrap capacitance at the enabled output controlled switch, and causes one of the series pass transistors to conduct for discharging the bootstrap capacitance at the beginning of the precharge period of the bit lines.

REFERENCES:
patent: 5446685 (1995-08-01), Holst
patent: 6295218 (2001-09-01), Osada et al.
patent: 6888732 (2005-05-01), Hu

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